Design and characterization of 1.3-mum AlGaInAs-InP multiple-quantum-well lasers

Design and characterization of 1.3-mum AlGaInAs-InP multiple-quantum-well lasers

A comprehensive design method for long wavelength strained quantum-well lasers is applied to design uncooled multiple-quantum-well AlGaInAs-InP 1.3-mum lasers for communication systems. The method includes multiband effective mass theory and electromagnetic waveguide theory. The resulting AlGaInAs-I...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 2001-03, Vol.7 (2), p.340-349
Hauptverfasser: Selmic, S R, Chou, Tso-Min, Sih, Jiehping, Kirk, J B, Mantle, A, Butler, J K, Bour, D, Evans, G A
Format: Artikel
Sprache:eng
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Zusammenfassung:A comprehensive design method for long wavelength strained quantum-well lasers is applied to design uncooled multiple-quantum-well AlGaInAs-InP 1.3-mum lasers for communication systems. The method includes multiband effective mass theory and electromagnetic waveguide theory. The resulting AlGaInAs-InP laser has a threshold current of 12.5 mA at 25 deg C, with a slope efficiency of 0.43 W/A, at 77 K or greater characteristic temperature, a 38 deg perpendicular far-field beam divergence, and will operate at temperatures in excess of 100 deg C
ISSN:1077-260X
DOI:10.1109/2944.954148