Design of a superconducting MEM shunt switch for RF applications

We have designed, simulated and optimized a capacitively shunted RF MicroElectroMechanical (MEM) superconducting switch. The switch consists of a High Temperature Superconducting (HTS) YBa/sub 2/Cu/sub 3/O/sub 7/ coplanar waveguide (CPW) structure with a gold membrane bridge suspended above the center conductor and anchored at the ground planes (air gap 3 /spl mu/m). A thin layer of BaTiO/sub 3/, in the shape of a patch, lies on top of the center conductor and underneath the suspended gold membrane. Under an applied voltage, the gold bridge membrane actuates downwards and collapses on top of the dielectric layer of BaTiO/sub 3/ thereby capacitively shunting the RF signal to ground. Using Sonnet, simulations were conducted to optimize the switch design. An analysis of these results revealed interesting relationships between the switch mechanical and electrical parameters; this paper discusses and analyzes these results, along with measured data.