Ultra-high power factor of p-type Bi2Se3 for room-temperature thermoelectric applications
Achieving high zT in n-type and p-type thermoelements in similar compounds is a great challenge for device construction. Herein, we report a high-power factor of 480 μW/mK2 in Ga and Mn co-doped Bi2Se3 along with a maximum zT of 0.25 at 303 K as a p-type thermoelement. The co-doped Ga and Mn play di...
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| Veröffentlicht in: | Chemical communications (Cambridge, England) England), 2023-06, Vol.59 (52), p.8119-8122 |
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| container_issue | 52 |
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| container_title | Chemical communications (Cambridge, England) |
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| creator | Vijay, V Harish, S Archana, J Navaneethan, M |
| description | Achieving high zT in n-type and p-type thermoelements in similar compounds is a great challenge for device construction. Herein, we report a high-power factor of 480 μW/mK2 in Ga and Mn co-doped Bi2Se3 along with a maximum zT of 0.25 at 303 K as a p-type thermoelement. The co-doped Ga and Mn play distinct roles in enhancing the hole concentration to 1.6 × 1019 cm−3 with a maximized effective mass. In addition, a drastic reduction in lattice thermal conductivity of 0.5 W/mK is attained due to point defects of mass and strain field fluctuation scattering in Bi2Se3. |
| doi_str_mv | 10.1039/d3cc01072d |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_2825154259</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2829813631</sourcerecordid><originalsourceid>FETCH-LOGICAL-p216t-6bdae0410a475fcb4899475d3258eaf91d00b7544187085f22b099d32bb81dd63</originalsourceid><addsrcrecordid>eNpdkEtLAzEUhYMoWKsbf0HAjZtonjPJUosvKLjQgq5KJnNjp8w0MZNB_Pem6MqzuYdzPy6Xg9A5o1eMCnPdCucoozVvD9CMiUoSJfXb4d4rQ2oh1TE6GcctLWJKz9D7qs_Jkk33scExfEHC3rocEg4eR5K_I-Dbjr-AwL6EKYSBZBgiJJunBDhvIA0BenA5dQ7bGPvO2dyF3XiKjrztRzj7m3O0ur97XTyS5fPD0-JmSSJnVSZV01qgklEra-VdI7UxxbWCKw3WG9ZS2tRKSqZrqpXnvKHGlHXTaNa2lZijy9-7MYXPCca8HrrRQd_bHYRpXHPNFVOSK1PQi3_oNkxpV77bU0aXwgQTP5g6YVA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2829813631</pqid></control><display><type>article</type><title>Ultra-high power factor of p-type Bi2Se3 for room-temperature thermoelectric applications</title><source>Royal Society Of Chemistry Journals 2008-</source><source>Alma/SFX Local Collection</source><creator>Vijay, V ; Harish, S ; Archana, J ; Navaneethan, M</creator><creatorcontrib>Vijay, V ; Harish, S ; Archana, J ; Navaneethan, M</creatorcontrib><description>Achieving high zT in n-type and p-type thermoelements in similar compounds is a great challenge for device construction. Herein, we report a high-power factor of 480 μW/mK2 in Ga and Mn co-doped Bi2Se3 along with a maximum zT of 0.25 at 303 K as a p-type thermoelement. The co-doped Ga and Mn play distinct roles in enhancing the hole concentration to 1.6 × 1019 cm−3 with a maximized effective mass. In addition, a drastic reduction in lattice thermal conductivity of 0.5 W/mK is attained due to point defects of mass and strain field fluctuation scattering in Bi2Se3.</description><identifier>ISSN: 1359-7345</identifier><identifier>EISSN: 1364-548X</identifier><identifier>DOI: 10.1039/d3cc01072d</identifier><language>eng</language><publisher>Cambridge: Royal Society of Chemistry</publisher><subject>Point defects ; Power factor ; Room temperature ; Thermal conductivity</subject><ispartof>Chemical communications (Cambridge, England), 2023-06, Vol.59 (52), p.8119-8122</ispartof><rights>Copyright Royal Society of Chemistry 2023</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,778,782,27911,27912</link.rule.ids></links><search><creatorcontrib>Vijay, V</creatorcontrib><creatorcontrib>Harish, S</creatorcontrib><creatorcontrib>Archana, J</creatorcontrib><creatorcontrib>Navaneethan, M</creatorcontrib><title>Ultra-high power factor of p-type Bi2Se3 for room-temperature thermoelectric applications</title><title>Chemical communications (Cambridge, England)</title><description>Achieving high zT in n-type and p-type thermoelements in similar compounds is a great challenge for device construction. Herein, we report a high-power factor of 480 μW/mK2 in Ga and Mn co-doped Bi2Se3 along with a maximum zT of 0.25 at 303 K as a p-type thermoelement. The co-doped Ga and Mn play distinct roles in enhancing the hole concentration to 1.6 × 1019 cm−3 with a maximized effective mass. In addition, a drastic reduction in lattice thermal conductivity of 0.5 W/mK is attained due to point defects of mass and strain field fluctuation scattering in Bi2Se3.</description><subject>Point defects</subject><subject>Power factor</subject><subject>Room temperature</subject><subject>Thermal conductivity</subject><issn>1359-7345</issn><issn>1364-548X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNpdkEtLAzEUhYMoWKsbf0HAjZtonjPJUosvKLjQgq5KJnNjp8w0MZNB_Pem6MqzuYdzPy6Xg9A5o1eMCnPdCucoozVvD9CMiUoSJfXb4d4rQ2oh1TE6GcctLWJKz9D7qs_Jkk33scExfEHC3rocEg4eR5K_I-Dbjr-AwL6EKYSBZBgiJJunBDhvIA0BenA5dQ7bGPvO2dyF3XiKjrztRzj7m3O0ur97XTyS5fPD0-JmSSJnVSZV01qgklEra-VdI7UxxbWCKw3WG9ZS2tRKSqZrqpXnvKHGlHXTaNa2lZijy9-7MYXPCca8HrrRQd_bHYRpXHPNFVOSK1PQi3_oNkxpV77bU0aXwgQTP5g6YVA</recordid><startdate>20230627</startdate><enddate>20230627</enddate><creator>Vijay, V</creator><creator>Harish, S</creator><creator>Archana, J</creator><creator>Navaneethan, M</creator><general>Royal Society of Chemistry</general><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope></search><sort><creationdate>20230627</creationdate><title>Ultra-high power factor of p-type Bi2Se3 for room-temperature thermoelectric applications</title><author>Vijay, V ; Harish, S ; Archana, J ; Navaneethan, M</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p216t-6bdae0410a475fcb4899475d3258eaf91d00b7544187085f22b099d32bb81dd63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Point defects</topic><topic>Power factor</topic><topic>Room temperature</topic><topic>Thermal conductivity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vijay, V</creatorcontrib><creatorcontrib>Harish, S</creatorcontrib><creatorcontrib>Archana, J</creatorcontrib><creatorcontrib>Navaneethan, M</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Chemical communications (Cambridge, England)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vijay, V</au><au>Harish, S</au><au>Archana, J</au><au>Navaneethan, M</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Ultra-high power factor of p-type Bi2Se3 for room-temperature thermoelectric applications</atitle><jtitle>Chemical communications (Cambridge, England)</jtitle><date>2023-06-27</date><risdate>2023</risdate><volume>59</volume><issue>52</issue><spage>8119</spage><epage>8122</epage><pages>8119-8122</pages><issn>1359-7345</issn><eissn>1364-548X</eissn><abstract>Achieving high zT in n-type and p-type thermoelements in similar compounds is a great challenge for device construction. Herein, we report a high-power factor of 480 μW/mK2 in Ga and Mn co-doped Bi2Se3 along with a maximum zT of 0.25 at 303 K as a p-type thermoelement. The co-doped Ga and Mn play distinct roles in enhancing the hole concentration to 1.6 × 1019 cm−3 with a maximized effective mass. In addition, a drastic reduction in lattice thermal conductivity of 0.5 W/mK is attained due to point defects of mass and strain field fluctuation scattering in Bi2Se3.</abstract><cop>Cambridge</cop><pub>Royal Society of Chemistry</pub><doi>10.1039/d3cc01072d</doi><tpages>4</tpages></addata></record> |
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| source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
| subjects | Point defects Power factor Room temperature Thermal conductivity |
| title | Ultra-high power factor of p-type Bi2Se3 for room-temperature thermoelectric applications |
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