Ultra-high power factor of p-type Bi2Se3 for room-temperature thermoelectric applications

Ultra-high power factor of p-type Bi2Se3 for room-temperature thermoelectric applications

Achieving high zT in n-type and p-type thermoelements in similar compounds is a great challenge for device construction. Herein, we report a high-power factor of 480 μW/mK2 in Ga and Mn co-doped Bi2Se3 along with a maximum zT of 0.25 at 303 K as a p-type thermoelement. The co-doped Ga and Mn play di...

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Veröffentlicht in:Chemical communications (Cambridge, England) England), 2023-06, Vol.59 (52), p.8119-8122
Hauptverfasser: Vijay, V, Harish, S, Archana, J, Navaneethan, M
Format: Artikel
Sprache:eng
Schlagworte:
Point defects
Power factor
Room temperature
Thermal conductivity
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Zusammenfassung:Achieving high zT in n-type and p-type thermoelements in similar compounds is a great challenge for device construction. Herein, we report a high-power factor of 480 μW/mK2 in Ga and Mn co-doped Bi2Se3 along with a maximum zT of 0.25 at 303 K as a p-type thermoelement. The co-doped Ga and Mn play distinct roles in enhancing the hole concentration to 1.6 × 1019 cm−3 with a maximized effective mass. In addition, a drastic reduction in lattice thermal conductivity of 0.5 W/mK is attained due to point defects of mass and strain field fluctuation scattering in Bi2Se3.
ISSN:1359-7345
1364-548X
DOI:10.1039/d3cc01072d