Impurity Conduction Observed in Al-Doped 6H-SiC
6H-SiC single crystals doped with aluminum acceptors at different concentrations were investigated with admittance spectroscopy and Hall effect. Thermally activated impurity conduction was observed at temperatures below 160K. The activation energy of 17 meV was obtained from admittance spectroscopy...
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| Veröffentlicht in: | Materials science forum 2004-06, Vol.457-460, p.685-688 |
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| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | 6H-SiC single crystals doped with aluminum acceptors at different concentrations were investigated with admittance spectroscopy and Hall effect. Thermally activated impurity conduction was observed at temperatures below 160K. The activation energy of 17 meV was obtained from admittance spectroscopy as well as from temperature-dependent resistivity measurements. The Hall coefficient showed a sign reversal in the temperature range where hopping conduction dominates. |
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| ISSN: | 0255-5476 1662-9752 1662-9752 |
| DOI: | 10.4028/www.scientific.net/MSF.457-460.685 |