Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures

Partially relaxed InGaAs/GaAs heterostructures with a small lattice mismatch have been studied by means of atomic force microscopy and high-resolution x-ray diffractometry. Additionally, electron-beam induced current in a scanning electron microscope and transmission electron microscopy have been employed to investigate misfit dislocations formed at the (001) heterostructure interface. The measurements revealed a direct correlation between the surface cross-hatched morphology and the arrangement of interfacial misfit dislocations. The reciprocal lattice mapping and the rocking curve techniques employed for the samples aligned with either the [=10] or the [110] crystallographic direction perpendicular to the diffraction plane revealed anisotropic misfit strain relaxation of the InGaAs layers. This anisotropy results from an asymmetry in the formation of the *a and *b types of misfit dislocations oriented along the [=110] and [110] directions, respectively, which differ in their core structures. The misfit strain anisotropy causes a distortion of the unit cell of the layer and lowers its symmetry to orthorhombic.