Development of a silicon carbide radiation detector

The radiation detection properties of semiconductor detectors made of 4H silicon carbide were evaluated. Both Schottky and p-n junction devices were tested. Exposure to alpha particles from a /sup 238/Pu source led to robust signals from the detectors. The resolution of the Schottky SiC detector was...

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Veröffentlicht in:	IEEE Transactions on Nuclear Science 1998-06, Vol.45 (3), p.536-541
Hauptverfasser:	Ruddy, F.H., Dulloo, A.R., Seidel, J.G., Seshadri, S., Rowland, L.B.
Format:	Artikel
Sprache:	eng
Schlagworte:	ALPHA DETECTION Alpha particles Energy resolution GAMMA DETECTION INSTRUMENTATION, INCLUDING NUCLEAR AND PARTICLE DETECTORS JUNCTION DIODES P-n junctions Radiation detectors Robustness SCHOTTKY BARRIER DIODES SEMICONDUCTOR DETECTORS SEMICONDUCTOR MATERIALS Semiconductor radiation detectors Signal detection Silicon carbide SILICON CARBIDES Silicon radiation detectors Testing
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Zusammenfassung:	The radiation detection properties of semiconductor detectors made of 4H silicon carbide were evaluated. Both Schottky and p-n junction devices were tested. Exposure to alpha particles from a /sup 238/Pu source led to robust signals from the detectors. The resolution of the Schottky SiC detector was 5.8% (FWHM) at an energy of 294 keV, while that of the p-n junction was 6.6% (FWHM) at 260 keV. No effect of temperature in the range of 22 to 89/spl deg/C was observed on the characteristics of the /sup 238/Pu alpha-induced signal from the SiC detector. In addition, testing in a gamma field of 10,000 rad-Si h/sup -1/ showed that the alpha-induced signal was separable from the gamma signal.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/23.682444