Influence of thermal and field stress on trapped electrons in single and doped alkalihalides

Injection experiment has been performed to extract injection and photo-currents at constant field stress under different temperature ambient between 795 and 995 K in KCl, KBr and KBr doped KCl single crystals. The variation of the conductivity of injecting carriers with the color centers yielded act...

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Veröffentlicht in:	Journal of crystal growth 2004-02, Vol.261 (4), p.533-538
Hauptverfasser:	Kar, S, Bandyopadhyay, S, Ray, K.K, Maiti, A.K, Lahiri, A.K, Goswami, K
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Point defects A2. Czochralski method A2. Single crystal growth B1. Halides Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electronic transport in condensed matter Exact sciences and technology Growth from melts zone melting and refining Materials science Methods of crystal growth physics of crystal growth Photoconduction and photovoltaic effects Photoconduction and photovoltaic effects photodielectric effects Physics
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Beschreibung
Zusammenfassung:	Injection experiment has been performed to extract injection and photo-currents at constant field stress under different temperature ambient between 795 and 995 K in KCl, KBr and KBr doped KCl single crystals. The variation of the conductivity of injecting carriers with the color centers yielded activation energy value, which is found to have a threshold limit of doping with KBr in KCl matrix.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2003.09.047