Design, fabrication, and characterization of striped channel HEMT's

Design, fabrication, and characterization of striped channel HEMT's

A theoretical and experimental study of striped channel HEMT's is presented in this paper. The source to drain region of striped channel HEMT's is divided into a number of narrow conducting channels. Hence, the control of the charges by the Schottky gate is two-dimensional, which improves...

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Veröffentlicht in:IEEE transactions on electron devices 1994-10, Vol.41 (10), p.1716-1724
Hauptverfasser: Bollaert, S., Legris, P., Delos, E., Cappy, A., Debray, P., Blanchet, J.
Format: Artikel
Sprache:eng
Schlagworte:
Electrons
Fabrication
FETs
Gallium arsenide
HEMTs
Physics
Semiconductor device modeling
Topology
Transconductance
Wires
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container_end_page 1724
container_issue 10
container_start_page 1716
container_title IEEE transactions on electron devices
container_volume 41
creator Bollaert, S.
Legris, P.
Delos, E.
Cappy, A.
Debray, P.
Blanchet, J.
description A theoretical and experimental study of striped channel HEMT's is presented in this paper. The source to drain region of striped channel HEMT's is divided into a number of narrow conducting channels. Hence, the control of the charges by the Schottky gate is two-dimensional, which improves the transconductance value. Striped channel HEMT's have been successfully realized and characterized. The experimental results agree well with the theoretical ones. The structure of an optimized device is then proposed.< >
doi_str_mv 10.1109/16.324579
format Article
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subjects Electrons
Fabrication
FETs
Gallium arsenide
HEMTs
Physics
Semiconductor device modeling
Topology
Transconductance
Wires
title Design, fabrication, and characterization of striped channel HEMT's
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