Design, fabrication, and characterization of striped channel HEMT's

Design, fabrication, and characterization of striped channel HEMT's

A theoretical and experimental study of striped channel HEMT's is presented in this paper. The source to drain region of striped channel HEMT's is divided into a number of narrow conducting channels. Hence, the control of the charges by the Schottky gate is two-dimensional, which improves...

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Veröffentlicht in:IEEE transactions on electron devices 1994-10, Vol.41 (10), p.1716-1724
Hauptverfasser: Bollaert, S., Legris, P., Delos, E., Cappy, A., Debray, P., Blanchet, J.
Format: Artikel
Sprache:eng
Schlagworte:
Electrons
Fabrication
FETs
Gallium arsenide
HEMTs
Physics
Semiconductor device modeling
Topology
Transconductance
Wires
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Zusammenfassung:A theoretical and experimental study of striped channel HEMT's is presented in this paper. The source to drain region of striped channel HEMT's is divided into a number of narrow conducting channels. Hence, the control of the charges by the Schottky gate is two-dimensional, which improves the transconductance value. Striped channel HEMT's have been successfully realized and characterized. The experimental results agree well with the theoretical ones. The structure of an optimized device is then proposed.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.324579