Electrical resistance of ultra thin Ag-, Cu- and Mn-films on Ge-substrates

The resistivity ρ of very thin Ag- and Cu-films prepared in a very high vacuum on Ge-substrates could be as low as 4 μΩm for 1-nm thick films. ρ was found to be approximately proportional to t − n , with 2< n

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Bibliographische Detailangaben
Veröffentlicht in:	Thin solid films 2004-06, Vol.458 (1), p.322-324
Hauptverfasser:	Schrőder, Klaus, Hollander, Jonathan
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity of specific materials Copper Electrical properties of specific thin films Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in condensed matter Exact sciences and technology Manganese Metal and metallic alloys Metals and metallic alloys Physics Resistivity Silver Transition-metal compounds
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Beschreibung
Zusammenfassung:	The resistivity ρ of very thin Ag- and Cu-films prepared in a very high vacuum on Ge-substrates could be as low as 4 μΩm for 1-nm thick films. ρ was found to be approximately proportional to t − n , with 2< n
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2003.12.060