Electrical Properties of G4-48azo Dendrimer Containing Azobenzene Functional Groups
In this study, we attempted to fabricate dendrimer Langmuir-Blodgett (LB) films functionalized with azobenzene groups in their periphery. It is well known that azoenzene-type compounds undergo an efficient and fully reversible photo-isomerization reaction. We investigated monolayer behavior and its...
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Veröffentlicht in: | Materials science forum 2004-01, Vol.449-452, p.913-916 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | In this study, we attempted to fabricate dendrimer Langmuir-Blodgett (LB) films
functionalized with azobenzene groups in their periphery. It is well known that azoenzene-type compounds undergo an efficient and fully reversible photo-isomerization reaction. We investigated monolayer behavior and its characteristics at air-water interface by LB method. Then the molecular behavior shift of the monolayer by 365[nm] light irradiation was also measured because of the isomerization of azobenzene group in periphery. The electrical properties of G4-48Azo dendrimer were compared with between trans form and cis form using metal/dendrimer LB film/metal (MIM)structure and using STM system. |
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ISSN: | 0255-5476 1662-9752 1662-9752 |
DOI: | 10.4028/www.scientific.net/MSF.449-452.913 |