Electrical Properties of G4-48azo Dendrimer Containing Azobenzene Functional Groups

In this study, we attempted to fabricate dendrimer Langmuir-Blodgett (LB) films functionalized with azobenzene groups in their periphery. It is well known that azoenzene-type compounds undergo an efficient and fully reversible photo-isomerization reaction. We investigated monolayer behavior and its...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials science forum 2004-01, Vol.449-452, p.913-916
Hauptverfasser: Lee, Burm Jong, Jung, Sang Burm, Kwon, Young Soon, Kim, Chung Kyun, Yoo, Seung Yeop, Yang, Ki Sung
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this study, we attempted to fabricate dendrimer Langmuir-Blodgett (LB) films functionalized with azobenzene groups in their periphery. It is well known that azoenzene-type compounds undergo an efficient and fully reversible photo-isomerization reaction. We investigated monolayer behavior and its characteristics at air-water interface by LB method. Then the molecular behavior shift of the monolayer by 365[nm] light irradiation was also measured because of the isomerization of azobenzene group in periphery. The electrical properties of G4-48Azo dendrimer were compared with between trans form and cis form using metal/dendrimer LB film/metal (MIM)structure and using STM system.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.449-452.913