LATERAL GRAPHOEPITAXY OF GERMANIUM CONTROLLED BY MICROSTRUCTURES ON SiO2 SURFACE

The lateral graphoepitaxy of Ge on a SiO2 surface was demonstrated. An X-ray diffraction pattern with a (400) peak was obtained in a Ge crystal grown on microholes with four 10-nm-thick SiO2 sidewalls, which were thermally oxidized Si {111} planes. Using this Ge crystal on the microholes as a seed crystal, a Ge crystal with a (400) orientation was laterally grown on a 10-nm-thick SiO2 layer, which was a thermally oxidized flat Si (100) surface, by zone melting. 9 refs.