Controllable Modificatiion of SiC Nanowires Encapsulated in BN Nanotubes

Controllable Modificatiion of SiC Nanowires Encapsulated in BN Nanotubes

Semiconducting beta-SiC nanowires encapsulated in BN nanotubes are prepared using chemical vapor deposition. An unusual feature-a gap of 10-15 nm in width between the inner wall of the BN tube and the SiC nanowire -allows various chemical and morphological modifications to be performed on the nanowi...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2005-03, Vol.17 (5), p.545-549
Hauptverfasser: Li, Y, Dorozhkin, P S, Bando, Y, Golberg, D
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Semiconducting beta-SiC nanowires encapsulated in BN nanotubes are prepared using chemical vapor deposition. An unusual feature-a gap of 10-15 nm in width between the inner wall of the BN tube and the SiC nanowire -allows various chemical and morphological modifications to be performed on the nanowires.
ISSN:0935-9648
DOI:10.1002/adma.200401266