Dependence of the linewidth enhancement factor on the number of compressively strained quantum well in lasers

Dependence of the linewidth enhancement factor on the number of compressively strained quantum well in lasers

We have systematically studied the well number dependence of the linewidth enhancement factor in strained quantum-well (QW) lasers and have demonstrated experimentally that the linewidth enhancement factor can be reduced from /spl sim/9.4 to /spl sim/2.0 by increasing the number of compressively str...

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Veröffentlicht in:IEEE photonics technology letters 1997-08, Vol.9 (8), p.1081-1083
Hauptverfasser: Cho, S.H., Lu, C.C., Hovinen, M., Nam, K., Vusirikala, V., Song, J.H., Johnson, F.G., Stone, D., Dagenais, M.
Format: Artikel
Sprache:eng
Schlagworte:
Chemical lasers
Indium phosphide
Laser modes
Laser theory
Molecular beam epitaxial growth
Quantum well devices
Quantum well lasers
Semiconductor lasers
Waveguide lasers
Wavelength measurement
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Zusammenfassung:We have systematically studied the well number dependence of the linewidth enhancement factor in strained quantum-well (QW) lasers and have demonstrated experimentally that the linewidth enhancement factor can be reduced from /spl sim/9.4 to /spl sim/2.0 by increasing the number of compressively strained QW's from 2 to 8. This behavior is primarily due to an increase in the differential gain with the number of QW's.
ISSN:1041-1135
1941-0174
DOI:10.1109/68.605507