Carrier transport and optical properties in GaAs far-infrared/terahertz mirror structures

We report on detailed carrier transport and optical properties in doped/undoped GaAs far-infrared (FIR)/terahertz (THz) mirror structures for GaAs-based FIR/THz device application. By the aid of variable magnetic field Hall and Shubnikov de Haas measurements, we have analyzed the carrier concentrati...

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Veröffentlicht in:	Thin solid films 2006-08, Vol.514 (1), p.310-315
Hauptverfasser:	Ye, H.B., Zhang, Y.H., Shen, W.Z.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity of specific materials Electrical properties and measurements Electronic transport in condensed matter Exact sciences and technology Iii-v and ii-vi semiconductors Molecular beam epitaxy (MBE) Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optoelectronic devices Physics Semiconductors Visible and ultraviolet spectra
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Beschreibung
Zusammenfassung:	We report on detailed carrier transport and optical properties in doped/undoped GaAs far-infrared (FIR)/terahertz (THz) mirror structures for GaAs-based FIR/THz device application. By the aid of variable magnetic field Hall and Shubnikov de Haas measurements, we have analyzed the carrier concentration, mobility and scattering times. It is found that ionized impurity scattering is the dominant scattering mechanism in the GaAs FIR/THz mirror structures. We investigate numerically the energy flux along the mirror depth and the reflection of the mirror structure. The experimental FIR/THz reflection and transmission spectra demonstrate the reliability of the optical analysis.
ISSN:	0040-6090 1879-2731
DOI:	10.1016/j.tsf.2006.03.009