Electric field-induced characteristics of NaSbSe2 thin films obtained by laser technology

Multi-component compounds are of special interest for numerous applications in photonics and microelectronics due to flexibility of their electric and structural properties. Sb-contained semiconductor materials are attractive for performing various field-effect sensors operating under different environmental conditions. Room-temperature electric field-induced characteristics of metal-semiconductor structures based on thin (up to 1 μm) amorphous films NaSbSe2 grown by laser recrystallization on the glass substrates were investigated under normal atmospheric conditions. Transmission electron microscopy and X-ray diffraction methods applied for studying the films’ surface were shown island-like relief. The current–field functions were registered as power-like dependencies Iexper∼(Fa)mexp(−Esa/kBT), where Fa stands for applied electric field, Esa is energy of surface charge centers activation and m∼1. These data point out the noticeable influence of the film surface on electric properties of the structure as a whole. Numerical analysis of the experimental data has demonstrated a complete mechanism of carriers’ transfer as superposition of quasi-space charge limited current and tunneling conductivity. Results obtained under the study are seen to be useful for further development of the growth technology and device fabrication.