Circuit performance of CMOS technologies with silicon dioxide and reoxidized nitrided oxide gate dielectrics

Circuit performance of CMOS technologies with silicon dioxide and reoxidized nitrided oxide gate dielectrics

The circuit performance of CMOS technologies with silicon dioxide (SiO/sub 2/) and reoxidized nitrided oxide (RONO) gate dielectrics over the normal regime of digital circuit operation, i.e. V/sub GS/

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Veröffentlicht in:IEEE electron device letters 1990-07, Vol.11 (7), p.294-296
Hauptverfasser: Lee, S.-W., Chan, T.-Y., Wu, A.T.
Format: Artikel
Sprache:eng
Schlagworte:
Circuit optimization
Circuit simulation
CMOS digital integrated circuits
CMOS technology
Dielectrics
Digital circuits
Electron mobility
Inverters
Silicon compounds
Temperature distribution
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Beschreibung
Zusammenfassung:The circuit performance of CMOS technologies with silicon dioxide (SiO/sub 2/) and reoxidized nitrided oxide (RONO) gate dielectrics over the normal regime of digital circuit operation, i.e. V/sub GS/
ISSN:0741-3106
1558-0563
DOI:10.1109/55.56479