CMOS magnetic-field sensor system
A magnetic-field sensor system integrated in CMOS technology with additional processing steps necessary for sensor fabrication is presented. The system contains a magnetoresistive permalloy microbridge acting as a sensor, temperature compensation circuitry, programmable readout electronics, referenc...
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Veröffentlicht in: | IEEE journal of solid-state circuits 1994-08, Vol.29 (8), p.1002-1005 |
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container_title | IEEE journal of solid-state circuits |
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creator | Sprotte, A. Buckhorst, K. Brockherde, W. Hosticka, B.J. Bosch, D. |
description | A magnetic-field sensor system integrated in CMOS technology with additional processing steps necessary for sensor fabrication is presented. The system contains a magnetoresistive permalloy microbridge acting as a sensor, temperature compensation circuitry, programmable readout electronics, reference voltage bias, and clock generation. It features maximum magnetic flux sensitivity of 70 mV//spl mu/T (corresponds to the magnetic-field sensitivity of 88.2 mV/(A/m) at /spl mu//sub r/=1) and its temperature gain is below 260 ppm//spl deg/C in the range between -50/spl deg/C and +100/spl deg/C.< > |
doi_str_mv | 10.1109/4.297713 |
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The system contains a magnetoresistive permalloy microbridge acting as a sensor, temperature compensation circuitry, programmable readout electronics, reference voltage bias, and clock generation. 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The system contains a magnetoresistive permalloy microbridge acting as a sensor, temperature compensation circuitry, programmable readout electronics, reference voltage bias, and clock generation. 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The system contains a magnetoresistive permalloy microbridge acting as a sensor, temperature compensation circuitry, programmable readout electronics, reference voltage bias, and clock generation. It features maximum magnetic flux sensitivity of 70 mV//spl mu/T (corresponds to the magnetic-field sensitivity of 88.2 mV/(A/m) at /spl mu//sub r/=1) and its temperature gain is below 260 ppm//spl deg/C in the range between -50/spl deg/C and +100/spl deg/C.< ></abstract><pub>IEEE</pub><doi>10.1109/4.297713</doi><tpages>4</tpages></addata></record> |
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subjects | CMOS process CMOS technology Fabrication Integrated circuit technology Magnetic circuits Magnetic flux Magnetic sensors Magnetoresistance Sensor systems Temperature sensors |
title | CMOS magnetic-field sensor system |
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