CMOS magnetic-field sensor system

CMOS magnetic-field sensor system

A magnetic-field sensor system integrated in CMOS technology with additional processing steps necessary for sensor fabrication is presented. The system contains a magnetoresistive permalloy microbridge acting as a sensor, temperature compensation circuitry, programmable readout electronics, referenc...

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Veröffentlicht in:IEEE journal of solid-state circuits 1994-08, Vol.29 (8), p.1002-1005
Hauptverfasser: Sprotte, A., Buckhorst, K., Brockherde, W., Hosticka, B.J., Bosch, D.
Format: Artikel
Sprache:eng
Schlagworte:
CMOS process
CMOS technology
Fabrication
Integrated circuit technology
Magnetic circuits
Magnetic flux
Magnetic sensors
Magnetoresistance
Sensor systems
Temperature sensors
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Beschreibung
Zusammenfassung:A magnetic-field sensor system integrated in CMOS technology with additional processing steps necessary for sensor fabrication is presented. The system contains a magnetoresistive permalloy microbridge acting as a sensor, temperature compensation circuitry, programmable readout electronics, reference voltage bias, and clock generation. It features maximum magnetic flux sensitivity of 70 mV//spl mu/T (corresponds to the magnetic-field sensitivity of 88.2 mV/(A/m) at /spl mu//sub r/=1) and its temperature gain is below 260 ppm//spl deg/C in the range between -50/spl deg/C and +100/spl deg/C.< >
ISSN:0018-9200
1558-173X
DOI:10.1109/4.297713