Understanding and Mitigating the Degradation of Perovskite Solar Cells Based on a Nickel Oxide Hole Transport Material during Damp Heat Testing
The development of stable materials, processable on a large area, is a prerequisite for perovskite industrialization. Beyond the perovskite absorber itself, this should also guide the development of all other layers in the solar cell. In this regard, the use of NiO x as a hole transport material (HT...
Gespeichert in:
Veröffentlicht in: | ACS applied materials & interfaces 2023-06, Vol.15 (23), p.27941-27951 |
---|---|
Hauptverfasser: | , , , , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The development of stable materials, processable on a large area, is a prerequisite for perovskite industrialization. Beyond the perovskite absorber itself, this should also guide the development of all other layers in the solar cell. In this regard, the use of NiO x as a hole transport material (HTM) offers several advantages, as it can be deposited with high throughput on large areas and on flat or textured surfaces via sputtering, a well-established industrial method. However, NiO x may trigger the degradation of perovskite solar cells (PSCs) when exposed to environmental stressors. Already after 100 h of damp heat stressing, a strong fill factor (FF) loss appears in conjunction with a characteristic S-shaped J–V curve. By performing a wide range of analysis on cells and materials, completed by device simulation, the cause of the degradation is pinpointed and mitigation strategies are proposed. When NiO x is heated in an air-tight environment, its free charge carrier density drops, resulting in a band misalignment at the NiO x /perovskite interface and in the formation of a barrier impeding hole extraction. Adding an organic layer between the NiO x and the perovskite enables higher performances but not long-term thermal stability, for which reducing the NiO x thickness is necessary. |
---|---|
ISSN: | 1944-8244 1944-8252 |
DOI: | 10.1021/acsami.3c02709 |