CMOS voltage references using lateral bipolar transistors
Two bandgap references are presented which make use of CMOS compatible lateral bipolar transistors. The circuits are designed to be insensitive to the low beta and alpha current gains of these devices. Their accuracy is not degraded by any amplifier offset. The first reference has an intrinsic low o...
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Veröffentlicht in: | IEEE journal of solid-state circuits 1985-12, Vol.20 (6), p.1151-1157 |
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container_title | IEEE journal of solid-state circuits |
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creator | Degrauwe, M.G.R. Leuthold, O.N. Vittoz, E.A. Oguey, H.J. Descombes, A. |
description | Two bandgap references are presented which make use of CMOS compatible lateral bipolar transistors. The circuits are designed to be insensitive to the low beta and alpha current gains of these devices. Their accuracy is not degraded by any amplifier offset. The first reference has an intrinsic low output impedance. Experimental results yield an output voltage which is constant within 2 mV, over the commercial temperature range (0 to 70/spl deg/C), when all the circuits of the same batch are trimmed at a single temperature. The load regulation is 3.5 /spl mu/V//spl mu/A, and the power supply rejection ratio (PSRR) at 100 Hz is 60 dB. Measurements on a second reference yield a PSRR of minimum 77 dB at 100 Hz. Temperature behaviour is identical to the first circuit presented. This circuit requires a supply voltage of only 1.7 V. |
doi_str_mv | 10.1109/JSSC.1985.1052453 |
format | Article |
fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28210770</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1052453</ieee_id><sourcerecordid>28903815</sourcerecordid><originalsourceid>FETCH-LOGICAL-c354t-413835f01a0adeddedacc64a087240032e03bd3bf35ea7dafe33e7f6a8cee8173</originalsourceid><addsrcrecordid>eNqNkE1Lw0AQhhdRsFZ_gHjJQbylzn41m6MUP6n0UAVvy3QzKZE1qbup4L93S4p4FAaGgWdeZh7GzjlMOIfy-mm5nE14afSEgxZKywM24lqbnBfy7ZCNALjJSwFwzE5ifE-jUoaPWDl7Xiyzr873uKYsUE2BWkcx28amXWceewros1Wz6TyGrA_Yxib2XYin7KhGH-ls38fs9e72ZfaQzxf3j7Obee6kVn2uuDRS18ARsKIqFTo3VQimEApACgK5quSqlpqwqLAmKamop2gckUnXj9nVkLsJ3eeWYm8_mujIe2yp20YrTAnScP0PUHAoCkggH0AXuhjTz3YTmg8M35aD3dm0O5t2Z9Pubaady304Roe-Th5cE38XTaGEENOEXQxYQ0R_YoeQH5Z1fc8</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28210770</pqid></control><display><type>article</type><title>CMOS voltage references using lateral bipolar transistors</title><source>IEEE Electronic Library (IEL)</source><creator>Degrauwe, M.G.R. ; Leuthold, O.N. ; Vittoz, E.A. ; Oguey, H.J. ; Descombes, A.</creator><creatorcontrib>Degrauwe, M.G.R. ; Leuthold, O.N. ; Vittoz, E.A. ; Oguey, H.J. ; Descombes, A.</creatorcontrib><description>Two bandgap references are presented which make use of CMOS compatible lateral bipolar transistors. The circuits are designed to be insensitive to the low beta and alpha current gains of these devices. Their accuracy is not degraded by any amplifier offset. The first reference has an intrinsic low output impedance. Experimental results yield an output voltage which is constant within 2 mV, over the commercial temperature range (0 to 70/spl deg/C), when all the circuits of the same batch are trimmed at a single temperature. The load regulation is 3.5 /spl mu/V//spl mu/A, and the power supply rejection ratio (PSRR) at 100 Hz is 60 dB. Measurements on a second reference yield a PSRR of minimum 77 dB at 100 Hz. Temperature behaviour is identical to the first circuit presented. This circuit requires a supply voltage of only 1.7 V.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.1985.1052453</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Analog-digital conversion ; Applied sciences ; Bipolar transistors ; CMOS technology ; Digital circuits ; Electronics ; Exact sciences and technology ; Impedance ; Integrated circuits ; MOSFETs ; Photonic band gap ; Power supplies ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Temperature distribution ; Threshold voltage</subject><ispartof>IEEE journal of solid-state circuits, 1985-12, Vol.20 (6), p.1151-1157</ispartof><rights>1986 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c354t-413835f01a0adeddedacc64a087240032e03bd3bf35ea7dafe33e7f6a8cee8173</citedby><cites>FETCH-LOGICAL-c354t-413835f01a0adeddedacc64a087240032e03bd3bf35ea7dafe33e7f6a8cee8173</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1052453$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1052453$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=8742226$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Degrauwe, M.G.R.</creatorcontrib><creatorcontrib>Leuthold, O.N.</creatorcontrib><creatorcontrib>Vittoz, E.A.</creatorcontrib><creatorcontrib>Oguey, H.J.</creatorcontrib><creatorcontrib>Descombes, A.</creatorcontrib><title>CMOS voltage references using lateral bipolar transistors</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>Two bandgap references are presented which make use of CMOS compatible lateral bipolar transistors. The circuits are designed to be insensitive to the low beta and alpha current gains of these devices. Their accuracy is not degraded by any amplifier offset. The first reference has an intrinsic low output impedance. Experimental results yield an output voltage which is constant within 2 mV, over the commercial temperature range (0 to 70/spl deg/C), when all the circuits of the same batch are trimmed at a single temperature. The load regulation is 3.5 /spl mu/V//spl mu/A, and the power supply rejection ratio (PSRR) at 100 Hz is 60 dB. Measurements on a second reference yield a PSRR of minimum 77 dB at 100 Hz. Temperature behaviour is identical to the first circuit presented. This circuit requires a supply voltage of only 1.7 V.</description><subject>Analog-digital conversion</subject><subject>Applied sciences</subject><subject>Bipolar transistors</subject><subject>CMOS technology</subject><subject>Digital circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Impedance</subject><subject>Integrated circuits</subject><subject>MOSFETs</subject><subject>Photonic band gap</subject><subject>Power supplies</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Temperature distribution</subject><subject>Threshold voltage</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1985</creationdate><recordtype>article</recordtype><recordid>eNqNkE1Lw0AQhhdRsFZ_gHjJQbylzn41m6MUP6n0UAVvy3QzKZE1qbup4L93S4p4FAaGgWdeZh7GzjlMOIfy-mm5nE14afSEgxZKywM24lqbnBfy7ZCNALjJSwFwzE5ifE-jUoaPWDl7Xiyzr873uKYsUE2BWkcx28amXWceewros1Wz6TyGrA_Yxib2XYin7KhGH-ls38fs9e72ZfaQzxf3j7Obee6kVn2uuDRS18ARsKIqFTo3VQimEApACgK5quSqlpqwqLAmKamop2gckUnXj9nVkLsJ3eeWYm8_mujIe2yp20YrTAnScP0PUHAoCkggH0AXuhjTz3YTmg8M35aD3dm0O5t2Z9Pubaady304Roe-Th5cE38XTaGEENOEXQxYQ0R_YoeQH5Z1fc8</recordid><startdate>19851201</startdate><enddate>19851201</enddate><creator>Degrauwe, M.G.R.</creator><creator>Leuthold, O.N.</creator><creator>Vittoz, E.A.</creator><creator>Oguey, H.J.</creator><creator>Descombes, A.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19851201</creationdate><title>CMOS voltage references using lateral bipolar transistors</title><author>Degrauwe, M.G.R. ; Leuthold, O.N. ; Vittoz, E.A. ; Oguey, H.J. ; Descombes, A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-413835f01a0adeddedacc64a087240032e03bd3bf35ea7dafe33e7f6a8cee8173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1985</creationdate><topic>Analog-digital conversion</topic><topic>Applied sciences</topic><topic>Bipolar transistors</topic><topic>CMOS technology</topic><topic>Digital circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Impedance</topic><topic>Integrated circuits</topic><topic>MOSFETs</topic><topic>Photonic band gap</topic><topic>Power supplies</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Temperature distribution</topic><topic>Threshold voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Degrauwe, M.G.R.</creatorcontrib><creatorcontrib>Leuthold, O.N.</creatorcontrib><creatorcontrib>Vittoz, E.A.</creatorcontrib><creatorcontrib>Oguey, H.J.</creatorcontrib><creatorcontrib>Descombes, A.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Degrauwe, M.G.R.</au><au>Leuthold, O.N.</au><au>Vittoz, E.A.</au><au>Oguey, H.J.</au><au>Descombes, A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>CMOS voltage references using lateral bipolar transistors</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1985-12-01</date><risdate>1985</risdate><volume>20</volume><issue>6</issue><spage>1151</spage><epage>1157</epage><pages>1151-1157</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>Two bandgap references are presented which make use of CMOS compatible lateral bipolar transistors. The circuits are designed to be insensitive to the low beta and alpha current gains of these devices. Their accuracy is not degraded by any amplifier offset. The first reference has an intrinsic low output impedance. Experimental results yield an output voltage which is constant within 2 mV, over the commercial temperature range (0 to 70/spl deg/C), when all the circuits of the same batch are trimmed at a single temperature. The load regulation is 3.5 /spl mu/V//spl mu/A, and the power supply rejection ratio (PSRR) at 100 Hz is 60 dB. Measurements on a second reference yield a PSRR of minimum 77 dB at 100 Hz. Temperature behaviour is identical to the first circuit presented. This circuit requires a supply voltage of only 1.7 V.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.1985.1052453</doi><tpages>7</tpages></addata></record> |
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source | IEEE Electronic Library (IEL) |
subjects | Analog-digital conversion Applied sciences Bipolar transistors CMOS technology Digital circuits Electronics Exact sciences and technology Impedance Integrated circuits MOSFETs Photonic band gap Power supplies Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Temperature distribution Threshold voltage |
title | CMOS voltage references using lateral bipolar transistors |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-18T23%3A50%3A16IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=CMOS%20voltage%20references%20using%20lateral%20bipolar%20transistors&rft.jtitle=IEEE%20journal%20of%20solid-state%20circuits&rft.au=Degrauwe,%20M.G.R.&rft.date=1985-12-01&rft.volume=20&rft.issue=6&rft.spage=1151&rft.epage=1157&rft.pages=1151-1157&rft.issn=0018-9200&rft.eissn=1558-173X&rft.coden=IJSCBC&rft_id=info:doi/10.1109/JSSC.1985.1052453&rft_dat=%3Cproquest_RIE%3E28903815%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28210770&rft_id=info:pmid/&rft_ieee_id=1052453&rfr_iscdi=true |