Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1−xN

We report band offset calculations for lattice-matched and pseudomorphically strained InxGa1-xN/InyGa1-yN heterointerfaces using the model solid theory combined with ab initio calculations. From the results obtained, we have calculated the bandgap of bulk InxGa1-xN, on GaN as a function of the indiu...

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Veröffentlicht in:	Journal of physics. Condensed matter 2004-01, Vol.16 (3), p.511-519
Hauptverfasser:	Bhouri, A, Mejri, H, Zid, F Ben, Belmabrouk, H, Said, M, Bouarissa, N, Lazzari, J-L
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronic transport in multilayers, nanoscale materials and structures Exact sciences and technology Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Physics Quantum wells
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