Modelling of visible and near infrared wavelength quantum well devices made of zinc-blende InxGa1−xN

We report band offset calculations for lattice-matched and pseudomorphically strained InxGa1-xN/InyGa1-yN heterointerfaces using the model solid theory combined with ab initio calculations. From the results obtained, we have calculated the bandgap of bulk InxGa1-xN, on GaN as a function of the indiu...

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Veröffentlicht in:	Journal of physics. Condensed matter 2004-01, Vol.16 (3), p.511-519
Hauptverfasser:	Bhouri, A, Mejri, H, Zid, F Ben, Belmabrouk, H, Said, M, Bouarissa, N, Lazzari, J-L
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Electronic transport in multilayers, nanoscale materials and structures Exact sciences and technology Iii-v semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions Physics Quantum wells
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Beschreibung
Zusammenfassung:	We report band offset calculations for lattice-matched and pseudomorphically strained InxGa1-xN/InyGa1-yN heterointerfaces using the model solid theory combined with ab initio calculations. From the results obtained, we have calculated the bandgap of bulk InxGa1-xN, on GaN as a function of the indium composition. We have also simulated the band edges of an InxGa1-xN/GaN heterostructure. A self-consistent analysis is made to investigate the effect of strains on the interband transitions with the aim of achieving emissions at both visible and near infrared wavelengths. An attempt to explain the results obtained will be presented.
ISSN:	0953-8984 1361-648X
DOI:	10.1088/0953-8984/16/3/027