Comparison of electrical and reliability characteristics ofdifferent 14 A oxynitride gate dielectrics

Comparison of electrical and reliability characteristics ofdifferent 14 A oxynitride gate dielectrics

A comparison of RTNO, N(2)O and N(2)O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 A is explored. The N(2)O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher...

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Veröffentlicht in:IEEE electron device letters 2002-07, Vol.23 (7), p.416-418
Hauptverfasser: Pan, Tung-Ming, Lin, Hsiu-Shan, Chen, Main-Gwo, Liu, Chuan-Hsi, Chang, Yih-Jau
Format: Artikel
Sprache:eng
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Zusammenfassung:A comparison of RTNO, N(2)O and N(2)O-ISSG ultrathin oxynitride gate dielectrics fabricated by combining a remote plasma nitridation (RPN) treatment with equal physical oxide thickness of 14 A is explored. The N(2)O-ISSG oxynitride gate dielectric film demonstrates good interface properties, higher mobility and excellent reliability. This film by RPN treatment is thus attractive as the gate dielectric for future ultra-large scale integration (ULSI) devices
ISSN:0741-3106
DOI:10.1109/LED.2002.1015223