MOCVD Growth of Transparent Conducting Cd2SnO4 Thin Films

The first preparation of transparent conducting Cd2SnO4 thin films by a simple MOCVD process is described. As‐deposited films using Cd(hfa)2(TMEDA) (Figure), at 365 °C are found to be highly crystalline with a relatively wide range of grain size of 100–300 nm. XRD indicates a cubic spinel Cd2SnO4 crystal structure and the possible presence of a small amount of CdO. The films exhibit conductivities of 2170 S/cm and a bandgap of 3.3 eV, rivaling those of commercial tin‐doped indium oxide.