A 1 GHz 50 mW GaAs dual modulus divider IC

A 1-GHz 50-mW GaAs dual modulus divider IC has been realized by using source-coupled FET logic. Dividing values are 128/129 and 64/65. The chip size is 0.94/spl times/1.07 mm, in which 223 FETs, 101 diodes, and 80 resistors are integrated. The platinum buried gate planar FET process is used in the I...

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Veröffentlicht in:	IEEE journal of solid-state circuits 1984-10, Vol.19 (5), p.710-715
Hauptverfasser:	Shimizu, S., Kamatani, Y., Toyoda, M., Kanazawa, K., Mochizuki, M., Terada, T., Hojo, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Circuit properties Counting circuits Electric, optical and optoelectronic circuits Electronics Exact sciences and technology FET integrated circuits Frequency conversion Frequency synthesizers Gallium arsenide Logic Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Phase locked loops Schottky diodes Transceivers Voltage-controlled oscillators
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Beschreibung
Zusammenfassung:	A 1-GHz 50-mW GaAs dual modulus divider IC has been realized by using source-coupled FET logic. Dividing values are 128/129 and 64/65. The chip size is 0.94/spl times/1.07 mm, in which 223 FETs, 101 diodes, and 80 resistors are integrated. The platinum buried gate planar FET process is used in the IC fabrication. The maximum toggle frequency is 1.12 GHz and IC current is 9.55 mA at 5 V supply voltage. About 10-30% chip yield was achieved in the wide (0.1-0.4 V) enhancement FET threshold voltage range.
ISSN:	0018-9200 1558-173X
DOI:	10.1109/JSSC.1984.1052212