Effect of Pre-Thin-Surface Grinding on Copper Chemical Mechanical Polishing

The chemical-mechanical polishing technology has been applied to the V-LSI planarization process. However, there remain some problems, such as non-uniformity of the removal rate, and the lack of selective removing ability for protruded large pattern areas. In this work, a novel high efficiency plana...

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Veröffentlicht in:Key engineering materials 2004-01, Vol.257-258, p.407-412
Hauptverfasser: Watanabe, Junji, Hirano, M., Hisamatsu, Tohru
Format: Artikel
Sprache:eng
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Zusammenfassung:The chemical-mechanical polishing technology has been applied to the V-LSI planarization process. However, there remain some problems, such as non-uniformity of the removal rate, and the lack of selective removing ability for protruded large pattern areas. In this work, a novel high efficiency planarization process using pre-thin-surface grinding followed by CMP is proposed. A patterned copper deposited layer is ground with a flexible diamond wheel system, which was newly developed. The wheel system can grind a thin surface following in the wake of a rugged surface contour. The surface ground is chemically activated and has a roughened surface region that can be easily polished. In the conventional CMP process, the pre-thin-surface ground copper layer was selectively polished and superior planarization of the protruded part was completed. Practically, a protruded region of about 1 mm width could not be planarized with a conventional CMP process. However, using the combined process proposed in this paper, this region was planarized to a step height of about 0.1 *mm. The efficiency of step height reduction in the grinding process is not so high and this remains to be a problem.
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.257-258.407