Effect of Pre-Thin-Surface Grinding on Copper Chemical Mechanical Polishing
The chemical-mechanical polishing technology has been applied to the V-LSI planarization process. However, there remain some problems, such as non-uniformity of the removal rate, and the lack of selective removing ability for protruded large pattern areas. In this work, a novel high efficiency plana...
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Veröffentlicht in: | Key engineering materials 2004-01, Vol.257-258, p.407-412 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The chemical-mechanical polishing technology has been applied to the V-LSI planarization process. However, there remain some problems, such as non-uniformity of the removal rate, and the lack of selective removing ability for protruded large pattern areas. In this work, a novel high efficiency planarization process using pre-thin-surface grinding followed by CMP is proposed. A patterned copper deposited layer is ground with a flexible diamond wheel system, which was newly developed. The wheel system can grind a thin surface following in the wake of a rugged surface contour. The surface ground is chemically activated and has a roughened surface region that can be easily polished. In the conventional CMP process, the pre-thin-surface ground copper layer was selectively polished and superior planarization of the protruded part was completed. Practically, a protruded region of about 1 mm width could not be planarized with a conventional CMP process. However, using the combined process proposed in this paper, this region was planarized to a step height of about 0.1 *mm. The efficiency of step height reduction in the grinding process is not so high and this remains to be a problem. |
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ISSN: | 1013-9826 1662-9795 1662-9795 |
DOI: | 10.4028/www.scientific.net/KEM.257-258.407 |