Charge correlation measurements from a double-sided solid state ministripe detector

Charge correlation measurements from a double-sided solid state ministripe detector

Good signal correlations were obtained between orthogonal stripes on opposite sides of two double-sided silicon ministripe detectors. The devices were 40 mm*40 mm*300- mu m thick, with 40 stripes on each side. Interstripe resistances were measured under unbiased and overbiased conditions. The noise...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE transactions on nuclear science 1989-02, Vol.36 (1), p.272-275
Hauptverfasser: Kalbfleisch, G.R., Skubic, P.L., Lambrecht, M.A., Wilburn, C.D.
Format: Artikel
Sprache:eng
Schlagworte:
Charge measurement
Current measurement
Gas detectors
Microstrip
Noise measurement
Probability distribution
Semiconductor device noise
Signal to noise ratio
Silicon devices
Solid state circuits
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Good signal correlations were obtained between orthogonal stripes on opposite sides of two double-sided silicon ministripe detectors. The devices were 40 mm*40 mm*300- mu m thick, with 40 stripes on each side. Interstripe resistances were measured under unbiased and overbiased conditions. The noise of each channel was measured as a function of bias voltage. The results indicate that the detectors work well as position-sensitive detectors.< >
ISSN:0018-9499
1558-1578
DOI:10.1109/23.34448