A 50-MHz 8-Mbit video RAM with a column direction drive sense amplifier

A 50-MHz 8-Mbit video RAM with a column direction drive sense amplifier

An 8-Mb (1-Mwords*8-b) dynamic RAM which utilizes a column direction drive sense amplifier to obtain low peak current is described. The power supply peak current is about one fourth of that for conventional circuits. The chip operates at 50-MHz and is fabricated with a 0.7- mu m n-well CMOS, double-...

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Veröffentlicht in:IEEE journal of solid-state circuits 1990-02, Vol.25 (1), p.30-35
Hauptverfasser: Kotani, H., Akamatsu, H., Matsushima, J., Okada, S., Shiragasawa, T., Yamada, T., Inoue, M.
Format: Artikel
Sprache:eng
Schlagworte:
Circuit noise
Counting circuits
Current supplies
DRAM chips
HDTV
Noise generators
Power supplies
Random access memory
Read-write memory
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Zusammenfassung:An 8-Mb (1-Mwords*8-b) dynamic RAM which utilizes a column direction drive sense amplifier to obtain low peak current is described. The power supply peak current is about one fourth of that for conventional circuits. The chip operates at 50-MHz and is fabricated with a 0.7- mu m n-well CMOS, double-level polysilicon, single-polycide, and double-level metal technology. The memory cell is a surrounding hi-capacitance cell structure. The cell size is 1.8*3.0 mu m/sup 2/, and the chip area is 12.7*16.91 mm/sup 2/.< >
ISSN:0018-9200
1558-173X
DOI:10.1109/4.50280