AlGaInN/AlGaInP Two-Wavelength Laser Diodes Fabricated by Wafer-Level Transferring Technique

An integrated two-wavelength laser diode (TWLD) which emits 405-nm-band and 650-nm-band laser beams from a single chip has been realized for the first time. The TWLD was fabricated by transferring a GaN-based laser diode (LD) onto an AlGaInP-based LD using a laser lift-off technique. Threshold currents in laser operations were 150 mA and 50 mA for the wavelengths of 403 nm and 652 nm, resp. The GaN-based LD maintained its intrinsic property throughout the transfer onto the AlGaInP-based LD. The distance between two emission spots was approximately 6 mu m. Such a close spot distance allows the optical components of the pickup to be simplified. 8 refs.