IIB-7 elimination of radiation-induced interface states by nitridation
Gespeichert in:
Veröffentlicht in: | IEEE transactions on electron devices 1983-11, Vol.30 (11), p.1574-1575 |
---|---|
Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | 1575 |
---|---|
container_issue | 11 |
container_start_page | 1574 |
container_title | IEEE transactions on electron devices |
container_volume | 30 |
creator | Terry, F.L. Aucoin, R.J. Naiman, M.L. Wyatt, P.W. Senturia, S.D. |
description | |
doi_str_mv | 10.1109/T-ED.1983.21355 |
format | Article |
fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_28167636</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1483256</ieee_id><sourcerecordid>28167636</sourcerecordid><originalsourceid>FETCH-LOGICAL-c161t-e9f1010b2bffe77bd1443a2a9efdb1b36eb83a0cc90e9da0f1485cc06dd5798c3</originalsourceid><addsrcrecordid>eNpFkDtPwzAUhS0EEqUwM7B4YnPrGyeOPUIfUKkSS5ktx76WjNKk2OnQf09fEtPRkb5zho-QZ-ATAK6nG7aYT0ArMSlAVNUNGUFV1UzLUt6SEeegmBZK3JOHnH-OVZZlMSLL1eqd1RTbuI2dHWLf0T7QZH08FxY7v3foaewGTME6pHmwA2baHGgXhxT9mXskd8G2GZ-uOSbfy8Vm9snWXx-r2duaOZAwMNQBOPCmaELAum48lKWwhdUYfAONkNgoYblzmqP2lgcoVeUcl95XtVZOjMnr5XeX-t895sFsY3bYtrbDfp9NoUDWUsgjOL2ALvU5Jwxml-LWpoMBbk6-zMYs5ubky5x9HRcvl0VExH-6VKKopPgDttVnbQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>28167636</pqid></control><display><type>article</type><title>IIB-7 elimination of radiation-induced interface states by nitridation</title><source>IEEE Electronic Library (IEL)</source><creator>Terry, F.L. ; Aucoin, R.J. ; Naiman, M.L. ; Wyatt, P.W. ; Senturia, S.D.</creator><creatorcontrib>Terry, F.L. ; Aucoin, R.J. ; Naiman, M.L. ; Wyatt, P.W. ; Senturia, S.D.</creatorcontrib><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/T-ED.1983.21355</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>IEEE</publisher><ispartof>IEEE transactions on electron devices, 1983-11, Vol.30 (11), p.1574-1575</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1483256$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1483256$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Terry, F.L.</creatorcontrib><creatorcontrib>Aucoin, R.J.</creatorcontrib><creatorcontrib>Naiman, M.L.</creatorcontrib><creatorcontrib>Wyatt, P.W.</creatorcontrib><creatorcontrib>Senturia, S.D.</creatorcontrib><title>IIB-7 elimination of radiation-induced interface states by nitridation</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1983</creationdate><recordtype>article</recordtype><recordid>eNpFkDtPwzAUhS0EEqUwM7B4YnPrGyeOPUIfUKkSS5ktx76WjNKk2OnQf09fEtPRkb5zho-QZ-ATAK6nG7aYT0ArMSlAVNUNGUFV1UzLUt6SEeegmBZK3JOHnH-OVZZlMSLL1eqd1RTbuI2dHWLf0T7QZH08FxY7v3foaewGTME6pHmwA2baHGgXhxT9mXskd8G2GZ-uOSbfy8Vm9snWXx-r2duaOZAwMNQBOPCmaELAum48lKWwhdUYfAONkNgoYblzmqP2lgcoVeUcl95XtVZOjMnr5XeX-t895sFsY3bYtrbDfp9NoUDWUsgjOL2ALvU5Jwxml-LWpoMBbk6-zMYs5ubky5x9HRcvl0VExH-6VKKopPgDttVnbQ</recordid><startdate>19831101</startdate><enddate>19831101</enddate><creator>Terry, F.L.</creator><creator>Aucoin, R.J.</creator><creator>Naiman, M.L.</creator><creator>Wyatt, P.W.</creator><creator>Senturia, S.D.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>19831101</creationdate><title>IIB-7 elimination of radiation-induced interface states by nitridation</title><author>Terry, F.L. ; Aucoin, R.J. ; Naiman, M.L. ; Wyatt, P.W. ; Senturia, S.D.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c161t-e9f1010b2bffe77bd1443a2a9efdb1b36eb83a0cc90e9da0f1485cc06dd5798c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1983</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Terry, F.L.</creatorcontrib><creatorcontrib>Aucoin, R.J.</creatorcontrib><creatorcontrib>Naiman, M.L.</creatorcontrib><creatorcontrib>Wyatt, P.W.</creatorcontrib><creatorcontrib>Senturia, S.D.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Terry, F.L.</au><au>Aucoin, R.J.</au><au>Naiman, M.L.</au><au>Wyatt, P.W.</au><au>Senturia, S.D.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>IIB-7 elimination of radiation-induced interface states by nitridation</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1983-11-01</date><risdate>1983</risdate><volume>30</volume><issue>11</issue><spage>1574</spage><epage>1575</epage><pages>1574-1575</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><pub>IEEE</pub><doi>10.1109/T-ED.1983.21355</doi><tpages>2</tpages></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | ISSN: 0018-9383 |
ispartof | IEEE transactions on electron devices, 1983-11, Vol.30 (11), p.1574-1575 |
issn | 0018-9383 1557-9646 |
language | eng |
recordid | cdi_proquest_miscellaneous_28167636 |
source | IEEE Electronic Library (IEL) |
title | IIB-7 elimination of radiation-induced interface states by nitridation |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-23T04%3A35%3A55IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=IIB-7%20elimination%20of%20radiation-induced%20interface%20states%20by%20nitridation&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Terry,%20F.L.&rft.date=1983-11-01&rft.volume=30&rft.issue=11&rft.spage=1574&rft.epage=1575&rft.pages=1574-1575&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/T-ED.1983.21355&rft_dat=%3Cproquest_RIE%3E28167636%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=28167636&rft_id=info:pmid/&rft_ieee_id=1483256&rfr_iscdi=true |