Ultrafast carrier dynamics in AlSb
The III-V semiconductor aluminum antimonide (AlSb) has potential applications as a radiation detector and as a material in high-mobility hetero-structures. Doping of AlSb with Se results in the formation of DX-type defect centers, which undergo a structural relaxation to form metastable donor states...
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Veröffentlicht in: | Bulletin of the American Physical Society 2004-03, Vol.49 (1), p.B11 3-B11 3 |
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Hauptverfasser: | , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The III-V semiconductor aluminum antimonide (AlSb) has potential applications as a radiation detector and as a material in high-mobility hetero-structures. Doping of AlSb with Se results in the formation of DX-type defect centers, which undergo a structural relaxation to form metastable donor states upon ionization. The bistability of the Se donors results in a number of intriguing photoinduced effects, including persistent photoconductivity and persistent photo-induced optical absorption. In this work, we present the first investigation, to our knowledge, of carrier processes in these materials on femtosecond time scales. Transient absorption measurements reveal both bimolecular and simple exponential relaxation components in the carrier response in both nominally un-doped and Se-doped materials. In Se-doped materials, we detect a rapid-onset, long-lived photoinduced IR absorbance associated with the formation of the metastable donor state. This work was supported by the NSF. |
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ISSN: | 0003-0503 |