FABRICATION AND CHARACTERIZATION OF METAL/FERROELECTRIC/SEMICONDUCTOR FIELD EFFECT TRANSISTOR WITH THE Ag/Bi4Ti3O12/p-Si(100) STRUCTURE

Metal-ferroelectric-semiconductor field-effect-transistors (MFS-FETs) with the Ag/Bi4Ti3O12/p-Si (100) structures were fabricated. The Ids-Vg hysteresis curve of the FET shows the counter-clockwise direction, which demonstrates the charge of channel conductivity due to the ferroelectric polarization of Bi4Ti3O12 and the memory window with a gate voltage of plus/minus 6 V was 1.2 V. The current ratio of Ids(on) to Ids(off) was over two orders in magnitude at zero gate voltage which indicates the MFS-FET can be used in nondestructive readout applications. 9 refs.