Continuous deposition and rapid fabrication of self-epitaxial CeO/2/ cap layers by PLD method on IBAD buffers

We have fabricated long buffered substrate tapes by a reel-to-reel process. The architecture is a self-epitaxial PLD-CeO/2/ cap layer on an IBAD-Gd/2/Zr/2/O/7/ buffered Hastelloy-C 276 tape. At the same time, we have investigated the effect of the deposition temperature for self-epitaxial growth of the PLD-CeO/2/ cap layer. We found that a deposition temperature of 500 deg C for the self-epitaxial PLD-CeO/2/ cap layer is the best in the range of 200/spl deg/C and 800 deg C for O/2/ pressure of 10-30 mTorr in terms of the in-plane grain alignment. At the deposition temperature of 500 deg C in the reel-to-reel process, we obtained a PLD-CeO/2/ cap layer with /Delta//phi/ values of about 5 degrees at a tape transfer speed of 6 m/h for IBAD-GZO tapes with /Delta//phi/ values of about 15 degrees in 100 m class long tapes. Furthermore, we also obtained a PLD-CeO/sub 2/ cap layer with better /Delta//spl phi/ values of 3.7-4.4 degrees at a tape transfer speed of 2 m/h for a 55 m long tape.