A 1.5-V 550-muW 176x144 autonomous CMOS active pixel image sensor

This paper addresses the development of a micropower 176x144 CMOS active pixel image sensor that dissipates one to two orders of magnitude less power than current state-of-the-art CMOS image sensors. The chip operates from a 1.5-V voltage source and the power consumption measured for the chip runnin...

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Veröffentlicht in:IEEE transactions on electron devices 2003-01, Vol.50 (1), p.96-105
Hauptverfasser: Cho, Kwang-Bo, Krymski, A I, Fossum, E R
Format: Artikel
Sprache:eng
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Zusammenfassung:This paper addresses the development of a micropower 176x144 CMOS active pixel image sensor that dissipates one to two orders of magnitude less power than current state-of-the-art CMOS image sensors. The chip operates from a 1.5-V voltage source and the power consumption measured for the chip running from an internal 25.2-MHz clock yielding 30 frames per second is about 550 muW. This amount enables the sensor to run from a watch battery. In order to achieve design goals, a low-power sensor design methodology is applied throughout the design process from system-level to process-level, while realizing the performance to satisfy the design specification. As an autonomous sensor, it can be operated with only three pads [GND, VDD (1.2-1.7 V), DATAOUT]. The die occupies 4 mm(2) of silicon.
ISSN:0018-9383
DOI:10.1109/TED.2002.806475