2.9 V operation GaAs power MESFET with 31.5-dBm output power and64%25 power-added efficiency
A state-of-the-art GaAs power MESFET operating at a drain bias of 2.9 V has been developed using the high-low doped channel structure grown by molecular beam epitaxy. The device has 0.6 mum gate length and 16 mm gate width. The power performance tested at a 2.9 V drain bias and 900 MHz operation fre...
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| Veröffentlicht in: | IEEE electron device letters 1994-09, Vol.15 (9), p.324-326 |
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| Hauptverfasser: | , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext |
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| Zusammenfassung: | A state-of-the-art GaAs power MESFET operating at a drain bias of 2.9 V has been developed using the high-low doped channel structure grown by molecular beam epitaxy. The device has 0.6 mum gate length and 16 mm gate width. The power performance tested at a 2.9 V drain bias and 900 MHz operation frequency was output power of 31.5 dBm with 11.5 dB gain and 64% power-added efficiency |
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| ISSN: | 0741-3106 |
| DOI: | 10.1109/55.311122 |