Dry etching characteristics and surface reconstruction of Cl/Si(1 1 3)
We present a detailed study of the interaction of chlorine with the Si(1 1 3) surface by means of scanning tunneling microscopy. Upon chlorine adsorption at a substrate temperature of 600 °C, the most prominent feature is the presence of (2× n) reconstructions with n=2, 3, 5, 7 or 9 in the order of...
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| Veröffentlicht in: | Surface science 2004-09, Vol.566, p.94-99, Article 94 |
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| container_title | Surface science |
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| creator | Flege, J.I. Schmidt, Th Materlik, G. Falta, J. |
| description | We present a detailed study of the interaction of chlorine with the Si(1
1
3) surface by means of scanning tunneling microscopy. Upon chlorine adsorption at a substrate temperature of 600 °C, the most prominent feature is the presence of (2×
n) reconstructions with
n=2, 3, 5, 7 or 9 in the order of decreasing chlorine coverage. A concurrent process is the rearrangement of step edges from an initially rough appearance to an atomically smooth configuration perpendicular to the [3
3
2
̄
] direction. |
| doi_str_mv | 10.1016/j.susc.2004.05.028 |
| format | Article |
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1
3) surface by means of scanning tunneling microscopy. Upon chlorine adsorption at a substrate temperature of 600 °C, the most prominent feature is the presence of (2×
n) reconstructions with
n=2, 3, 5, 7 or 9 in the order of decreasing chlorine coverage. A concurrent process is the rearrangement of step edges from an initially rough appearance to an atomically smooth configuration perpendicular to the [3
3
2
̄
] direction.</description><identifier>ISSN: 0039-6028</identifier><identifier>EISSN: 1879-2758</identifier><identifier>DOI: 10.1016/j.susc.2004.05.028</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Chlorine ; Etching ; High index single crystal surfaces ; Scanning tunneling microscopy ; Silicon ; Surface relaxation and reconstruction ; Surface structure, morphology, roughness, and topography</subject><ispartof>Surface science, 2004-09, Vol.566, p.94-99, Article 94</ispartof><rights>2004 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c395t-b39895fdd5a5238346325128af518463d5e3263d505f837956ed28aad13a77a83</citedby><cites>FETCH-LOGICAL-c395t-b39895fdd5a5238346325128af518463d5e3263d505f837956ed28aad13a77a83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0039602804005217$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27903,27904,65309</link.rule.ids></links><search><creatorcontrib>Flege, J.I.</creatorcontrib><creatorcontrib>Schmidt, Th</creatorcontrib><creatorcontrib>Materlik, G.</creatorcontrib><creatorcontrib>Falta, J.</creatorcontrib><title>Dry etching characteristics and surface reconstruction of Cl/Si(1 1 3)</title><title>Surface science</title><description>We present a detailed study of the interaction of chlorine with the Si(1
1
3) surface by means of scanning tunneling microscopy. Upon chlorine adsorption at a substrate temperature of 600 °C, the most prominent feature is the presence of (2×
n) reconstructions with
n=2, 3, 5, 7 or 9 in the order of decreasing chlorine coverage. A concurrent process is the rearrangement of step edges from an initially rough appearance to an atomically smooth configuration perpendicular to the [3
3
2
̄
] direction.</description><subject>Chlorine</subject><subject>Etching</subject><subject>High index single crystal surfaces</subject><subject>Scanning tunneling microscopy</subject><subject>Silicon</subject><subject>Surface relaxation and reconstruction</subject><subject>Surface structure, morphology, roughness, and topography</subject><issn>0039-6028</issn><issn>1879-2758</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNp9kEtLAzEQgIMoWB9_wFNOoofd5tHZzYIXqVaFggf1HGKStSnbTU2yQv-9WerJQ-cyzOMbmA-hK0pKSmg1XZdxiLpkhMxKAiVh4ghNqKibgtUgjtGEEN4UVe6forMY1yTHrIEJWjyEHbZJr1z_hfVKBaWTDS4mpyNWvcFxCK3SFgerfR9TGHRyvse-xfNu-uZuKKaY316gk1Z10V7-5XP0sXh8nz8Xy9enl_n9stC8gVR88kY00BoDChgXfFZxBpQJ1QIVuTBgORsTgVbwuoHKmjxVhnJV10rwc3S9v7sN_nuwMcmNi9p2neqtH6JkggKjFPIi2y_q4GMMtpXb4DYq7CQlclQm13JUJkdlkoDMajIk_kHaJTX-m4Jy3WH0bo_a_P2Ps0FG7WyvrXHZXJLGu0P4L9Srhc8</recordid><startdate>20040920</startdate><enddate>20040920</enddate><creator>Flege, J.I.</creator><creator>Schmidt, Th</creator><creator>Materlik, G.</creator><creator>Falta, J.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20040920</creationdate><title>Dry etching characteristics and surface reconstruction of Cl/Si(1 1 3)</title><author>Flege, J.I. ; Schmidt, Th ; Materlik, G. ; Falta, J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c395t-b39895fdd5a5238346325128af518463d5e3263d505f837956ed28aad13a77a83</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Chlorine</topic><topic>Etching</topic><topic>High index single crystal surfaces</topic><topic>Scanning tunneling microscopy</topic><topic>Silicon</topic><topic>Surface relaxation and reconstruction</topic><topic>Surface structure, morphology, roughness, and topography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Flege, J.I.</creatorcontrib><creatorcontrib>Schmidt, Th</creatorcontrib><creatorcontrib>Materlik, G.</creatorcontrib><creatorcontrib>Falta, J.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Flege, J.I.</au><au>Schmidt, Th</au><au>Materlik, G.</au><au>Falta, J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Dry etching characteristics and surface reconstruction of Cl/Si(1 1 3)</atitle><jtitle>Surface science</jtitle><date>2004-09-20</date><risdate>2004</risdate><volume>566</volume><spage>94</spage><epage>99</epage><pages>94-99</pages><artnum>94</artnum><issn>0039-6028</issn><eissn>1879-2758</eissn><abstract>We present a detailed study of the interaction of chlorine with the Si(1
1
3) surface by means of scanning tunneling microscopy. Upon chlorine adsorption at a substrate temperature of 600 °C, the most prominent feature is the presence of (2×
n) reconstructions with
n=2, 3, 5, 7 or 9 in the order of decreasing chlorine coverage. A concurrent process is the rearrangement of step edges from an initially rough appearance to an atomically smooth configuration perpendicular to the [3
3
2
̄
] direction.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.susc.2004.05.028</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0039-6028 |
| ispartof | Surface science, 2004-09, Vol.566, p.94-99, Article 94 |
| issn | 0039-6028 1879-2758 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_28152115 |
| source | Elsevier ScienceDirect Journals |
| subjects | Chlorine Etching High index single crystal surfaces Scanning tunneling microscopy Silicon Surface relaxation and reconstruction Surface structure, morphology, roughness, and topography |
| title | Dry etching characteristics and surface reconstruction of Cl/Si(1 1 3) |
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