Dry etching characteristics and surface reconstruction of Cl/Si(1 1 3)

Dry etching characteristics and surface reconstruction of Cl/Si(1 1 3)

We present a detailed study of the interaction of chlorine with the Si(1 1 3) surface by means of scanning tunneling microscopy. Upon chlorine adsorption at a substrate temperature of 600 °C, the most prominent feature is the presence of (2× n) reconstructions with n=2, 3, 5, 7 or 9 in the order of...

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Veröffentlicht in:Surface science 2004-09, Vol.566, p.94-99, Article 94
Hauptverfasser: Flege, J.I., Schmidt, Th, Materlik, G., Falta, J.
Format: Artikel
Sprache:eng
Schlagworte:
Chlorine
Etching
High index single crystal surfaces
Scanning tunneling microscopy
Silicon
Surface relaxation and reconstruction
Surface structure, morphology, roughness, and topography
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Zusammenfassung:We present a detailed study of the interaction of chlorine with the Si(1 1 3) surface by means of scanning tunneling microscopy. Upon chlorine adsorption at a substrate temperature of 600 °C, the most prominent feature is the presence of (2× n) reconstructions with n=2, 3, 5, 7 or 9 in the order of decreasing chlorine coverage. A concurrent process is the rearrangement of step edges from an initially rough appearance to an atomically smooth configuration perpendicular to the [3 3 2 ̄ ] direction.
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2004.05.028