High pressure effect on MoS2 and MoSe2 single crystals grown by CVT method

High pressure effect on MoS2 and MoSe2 single crystals grown by CVT method

Single crystals of MoS2 and MoSe2 were grown by chemical vapour transport method using iodine as a transporting agent and characterized by optical microscopy, energy dispersive analysis (EDAX), X-ray powder diffraction (XRD) and Hall mobility at room temperature. The variation of electrical resistan...

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Veröffentlicht in:Bulletin of materials science 2004-04, Vol.27 (2), p.213-216
Hauptverfasser: Dave, Madhavi, Vaidya, Rajiv, Patel, S. G., Jani, A. R.
Format: Artikel
Sprache:eng
Schlagworte:
Bridgman method
Crystal growth
Diffraction
Electron mobility
Hall effect
Iodine
Molybdenum compounds
Molybdenum disulfide
Optical microscopy
Pressure effects
Room temperature
Single crystals
X ray powder diffraction
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Zusammenfassung:Single crystals of MoS2 and MoSe2 were grown by chemical vapour transport method using iodine as a transporting agent and characterized by optical microscopy, energy dispersive analysis (EDAX), X-ray powder diffraction (XRD) and Hall mobility at room temperature. The variation of electrical resistance under pressure was monitored in a Bridgman anvil set-up up to 6.5 GPa to identify occurrence of any structural transition. MoS2 and MoSe2 do not undergo any structural transitions under pressure.
ISSN:0250-4707
0973-7669
DOI:10.1007/BF02708507