193-nm lithography

193-nm lithography

The trend in microelectronics toward printing features 0.25 /spl mu/m and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wa...

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Veröffentlicht in:IEEE journal of selected topics in quantum electronics 1995-09, Vol.1 (3), p.916-923
Hauptverfasser: Rothschild, M., Forte, A.R., Horn, M.W., Kunz, R.R., Palmateer, S.C., Sedlacek, J.H.C.
Format: Artikel
Sprache:eng
Schlagworte:
Argon
Bandwidth
Lenses
Lithography
Optical design
Optical materials
Optical refraction
Printing
Prototypes
Resists
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Beschreibung
Zusammenfassung:The trend in microelectronics toward printing features 0.25 /spl mu/m and below has motivated the development of lithography at the 193-nm wavelength of argon fluoride excimer lasers. This technology is in its early stages, but a picture is emerging of its strengths and limitations. The change in wavelength from 248 to 193 nm will require parallel progress in projection systems, optical materials, and photo-resist chemistries and processes. This paper reviews the current status of these various topics as they have been engineered under a multiyear program at MIT Lincoln Laboratory.< >
ISSN:1077-260X
1558-4542
DOI:10.1109/2944.473679