A 20 mW, 150 GHz InP HEMT MMIC power amplifier module

This paper describes a power amplifier (PA) module containing an InP high electron mobility transistor (HEMT) monolithic millimeter-wave integrated circuit (MMIC) amplifier chip, designed, and packaged at the Jet Propulsion Laboratory, and fabricated at HRL Laboratories. The module features 20 mW of...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2004-02, Vol.14 (2), p.56-58
Hauptverfasser:	Samoska, L., Peralta, A., Ming Hu, Micovic, M., Schmitz, A.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Chip formation Circuit properties Design. Technologies. Operation analysis. Testing Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Frequency ranges HEMTs High electron mobility transistors High power amplifiers Indium phosphide Indium phosphides Integrated circuit packaging Integrated circuits Laboratories Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Millimeter wave integrated circuits MMICs MODFETs Modules Power amplifiers Propulsion Semiconductor devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors
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Beschreibung
Zusammenfassung:	This paper describes a power amplifier (PA) module containing an InP high electron mobility transistor (HEMT) monolithic millimeter-wave integrated circuit (MMIC) amplifier chip, designed, and packaged at the Jet Propulsion Laboratory, and fabricated at HRL Laboratories. The module features 20 mW of output power at 150 GHz, with more than 10 mW available in the 148-160 GHz frequency range.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2003.822575