Multilayer directionally arranged silver nanowire networks for flexible transparent conductive films

Silver nanowire (AgNW) networks have excellent optoelectronic properties and have important applications in various optoelectronic devices. However, the random distribution of AgNWs coated on the substrate will cause problems such as uneven resistance and high surface roughness, which will affect th...

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Veröffentlicht in:Physical chemistry chemical physics : PCCP 2023-05, Vol.25 (21), p.14778-14785
Hauptverfasser: Guo, Zhijiang, Li, Xiaoli, Li, Ning, Liu, Xuanji, Li, Haojie, Li, Xuezhi, Wang, Yuxuan, Liang, Jianguo, Chen, Zhanchun
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Sprache:eng
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Zusammenfassung:Silver nanowire (AgNW) networks have excellent optoelectronic properties and have important applications in various optoelectronic devices. However, the random distribution of AgNWs coated on the substrate will cause problems such as uneven resistance and high surface roughness, which will affect the properties of the film. In order to solve these problems, this paper adopts the method of directional arrangement of AgNWs to prepare conductive films, by mixing AgNW aqueous solution with hydroxypropyl methyl cellulose (HPMC) to prepare conductive ink, and then the AgNWs are oriented on the flexible substrate by using the shear force generated during the Mayer rod coating process. The multilayer crossed three-dimensional (3D) AgNW conductive network is prepared, achieving a sheet resistance of 12.9 Ω sq −1 and a transmittance of 92.2% ( λ = 550 nm). In addition, the roughness RMS value of the layered and ordered AgNW/HPMC composite film is only 6.96 nm, which is much lower than that of the randomly arranged AgNW film (RMS = 19.8 nm), and the composite film also has excellent bending resistance and environmental stability. This adjustable coating method is simple to prepare and can realize the large-scale manufacturing of conductive films, which is important for the future development of flexible transparent conductive films. Silver nanowire (AgNW) networks have excellent optoelectronic properties and have important applications in various optoelectronic devices.
ISSN:1463-9076
1463-9084
DOI:10.1039/d3cp01591b