A 1-V TFT-load SRAM using a two-step word-voltage method

A 1-V TFT-load SRAM using a two-step word-voltage method

A 1-V SRAM using a TFT load cell was developed. Key circuits for obtaining the low-voltage operation are a two-step word-voltage (TSW) method, a submicroampere boosted-level generator using a multivibrator, and a sense amplifier using low-threshold MOSFETs. An access time of 250 ns and a standby cur...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:IEEE journal of solid-state circuits 1992-11, Vol.27 (11), p.1519-1524
Hauptverfasser: Ishibashi, K., Takasugi, K., Hashimoto, T., Sasaki, K.
Format: Artikel
Sprache:eng
Schlagworte:
Batteries
Circuit testing
CMOS technology
Electronic equipment
Low voltage
MOSFET circuits
Operational amplifiers
Random access memory
Thin film transistors
Threshold voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A 1-V SRAM using a TFT load cell was developed. Key circuits for obtaining the low-voltage operation are a two-step word-voltage (TSW) method, a submicroampere boosted-level generator using a multivibrator, and a sense amplifier using low-threshold MOSFETs. An access time of 250 ns and a standby current of 0.23 mu A were achieved for a 4-kb test chip using a 10.2- mu m/sup 2/ TFT-load cell. This technology is applicable for high-density and single-battery operational SRAMS.< >
ISSN:0018-9200
1558-173X
DOI:10.1109/4.165331