40-GHz coplanar waveguide bandpass filters on silicon substrate

We report a very simple process to fabricate high performance filter on Si at 40 GHz using proton implantation. The filter has only -3.4-dB loss at peak transmission of 40 GHz with a broad 9-GHz bandwidth. In sharp contrast, the filter on 1.5-μm SiO 2 isolated Si has much worse transmission and refl...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2002-11, Vol.12 (11), p.429-431
Hauptverfasser:	Chan, K.T., Chen, C.Y., Chin, A., Hsieh, J.C., Liu, J., Duh, T.S., Lin, W.J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Band pass filters Bandwidth Circuit properties Compatibility Coplanar waveguides Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Frequency filters Implantation Integrated circuits Isolation technology Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves Millimeter wave technology Propagation losses Protons Reflection Silicon Silicon substrates Very large scale integration
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Beschreibung
Zusammenfassung:	We report a very simple process to fabricate high performance filter on Si at 40 GHz using proton implantation. The filter has only -3.4-dB loss at peak transmission of 40 GHz with a broad 9-GHz bandwidth. In sharp contrast, the filter on 1.5-μm SiO 2 isolated Si has much worse transmission and reflection loss. This is the first demonstration of high performance filter at the millimeter-wave regime on Si with process compatible with current VLSI technology.
ISSN:	1531-1309 2771-957X 1558-1764 2771-9588
DOI:	10.1109/LMWC.2002.805535