Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon

Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 01) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon su...

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Veröffentlicht in:Journal of magnetism and magnetic materials 2006-04, Vol.299 (2), p.307-311
Hauptverfasser: KUNDALIYA, Darshan C, OGALE, S. B, DHAR, S, MCDONALD, K. F, KNOESEL, E, OSEDACH, T, LOFLAND, S. E, SHINDE, S. R, VENKATESAN, T
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container_end_page 311
container_issue 2
container_start_page 307
container_title Journal of magnetism and magnetic materials
container_volume 299
creator KUNDALIYA, Darshan C
OGALE, S. B
DHAR, S
MCDONALD, K. F
KNOESEL, E
OSEDACH, T
LOFLAND, S. E
SHINDE, S. R
VENKATESAN, T
description Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 01) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows b-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (100) substrate. The ferromagnetic transition temperature (Tc~215 K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ~15 deg in the ferromagnetic state.
doi_str_mv 10.1016/j.jmmm.2005.04.017
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subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Insulators
Magnetic properties and materials
Magnetic properties of monolayers and thin films
Magnetic properties of surface, thin films and multilayers
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
title Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon
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