Large second-harmonic kerr rotation in GaFeO3 thin films on YSZ buffered silicon

Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 01) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon su...

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Veröffentlicht in:	Journal of magnetism and magnetic materials 2006-04, Vol.299 (2), p.307-311
Hauptverfasser:	KUNDALIYA, Darshan C, OGALE, S. B, DHAR, S, MCDONALD, K. F, KNOESEL, E, OSEDACH, T, LOFLAND, S. E, SHINDE, S. R, VENKATESAN, T
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology Insulators Magnetic properties and materials Magnetic properties of monolayers and thin films Magnetic properties of surface, thin films and multilayers Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Physics
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Zusammenfassung:	Epitaxial thin films of gallium iron oxide (GaFeO3) are grown on (0 01) silicon by pulsed laser deposition (PLD) using yttrium-stabilized zirconia (YSZ) buffer layer. The crystalline template buffer layer is in situ PLD grown through the step of high-temperature stripping of the intrinsic silicon surface oxide. The X-ray diffraction pattern shows b-axis orientation of YSZ and b-axis orientation of GaFeO3 on Si (100) substrate. The ferromagnetic transition temperature (Tc~215 K) is in good agreement with the bulk data. The films show a large nonlinear second harmonic Kerr rotation of ~15 deg in the ferromagnetic state.
ISSN:	0304-8853
DOI:	10.1016/j.jmmm.2005.04.017