Characterization of ZnCdSeTe/MgZnSeTe materials for ZnTe-based visible optical devices

Bandgap energy and refractive indices of ZnTe‐based II–VI compounds such as ZnCdTe, ZnCdSeTe, and MgZnSeTe were systematically investigated. The refractive index data were approximated by the modified single effective oscillator method. Especially the approximation for MgZnSeTe made it possible to e...

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Veröffentlicht in:Physica Status Solidi (b) 2004-03, Vol.241 (3), p.483-486
Hauptverfasser: Nomura, Ichirou, Ochiai, Yasutomo, Toyomura, Naobumi, Manoshiro, Asuka, Kikuchi, Akihiko, Kishino, Katsumi
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Sprache:eng
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Zusammenfassung:Bandgap energy and refractive indices of ZnTe‐based II–VI compounds such as ZnCdTe, ZnCdSeTe, and MgZnSeTe were systematically investigated. The refractive index data were approximated by the modified single effective oscillator method. Especially the approximation for MgZnSeTe made it possible to estimate the refractive index values for any Mg composition in any wavelength of the transmission region. Using the refractive index data, waveguide analysis and design of ZnCdTe/MgZnSeTe laser structures were performed to obtain confinement factors more than 4.5%. ZnCdTe/MgZnSeTe light emitting diodes were fabricated on ZnTe substrates observing yellow light emissions around 583 nm. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.200304159