Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes

Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes

We report on the defect influence on the electrical properties of 4H-SiC Schottky diodes. The devices were fabricated on a n-type epilayer treated by chemical mechanical polishing. A surface defect map allows to correlate the defect presence to the electrical behavior of the devices. We find that th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Materials science forum 2004-01, Vol.457-460, p.1081-1084
Hauptverfasser: Meotto, Umberto M., Cavallini, Anna, Rossi, Marco, Giorgis, Fabrizio, Pirri, C. Fabrizio, Porro, Samuele, Richieri, G., Merlin, Luigi, Castaldini, Antonio, Celasco, Edvige, Perrone, Denis, Mandracci, P., Ferrero, Sergio, Scaltrito, Luciano
Format: Artikel
Sprache:eng
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report on the defect influence on the electrical properties of 4H-SiC Schottky diodes. The devices were fabricated on a n-type epilayer treated by chemical mechanical polishing. A surface defect map allows to correlate the defect presence to the electrical behavior of the devices. We find that the devices realized on a free defect zone and on micropipes do not show important differences in electrical parameters.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.457-460.1081