Localized Lateral Growth of Single-Walled Carbon Nanotubes for Field-Effect Transistors by a Cobalt-Mix-TEOS Method

Lateral-growth carbon nanotubes (CNTs) were fabricated in a pre-assigned area using an integrated circuit compatible method. In order to synthesize single wall carbon nanotubes (SWNT) for the fabrication of a field-effect transistor (FET), the cobalt-mixtetraethoxysilane (TEOS) (CMT) solution is proposed. The CMT solution has the unique property of dispersing the cobalt (Co) catalyst well and uniformly embedding it in a predetermined location after the CMT solution has solidified. The lateral growth of bundle-SWNT could be formed in atmospheric chemical vapor deposition (APCVD) with ethanol.